A.U. Lagies, L. Gohler, J. Sigg, P. Turkes, R. Kraus
{"title":"Degradation modeling of semiconductor devices and electrical circuits","authors":"A.U. Lagies, L. Gohler, J. Sigg, P. Turkes, R. Kraus","doi":"10.1109/SMELEC.1998.781155","DOIUrl":null,"url":null,"abstract":"A mathematical description for the degradation of semiconductor devices and electrical circuits is presented. It is based on the assumption that the reason for degradation is destruction of the internal structures, caused by the input of energy. The formulation is tested with the simulation of an IGBT module. Additionally, a method is presented to shorten the simulation time as much as possible.","PeriodicalId":356206,"journal":{"name":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.1998.781155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A mathematical description for the degradation of semiconductor devices and electrical circuits is presented. It is based on the assumption that the reason for degradation is destruction of the internal structures, caused by the input of energy. The formulation is tested with the simulation of an IGBT module. Additionally, a method is presented to shorten the simulation time as much as possible.
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