S. Chikaki, E. Soda, A. Gawase, T. Suzuki, Y. Kawashima, N. Oda, S. Saito
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引用次数: 2
Abstract
To enhance the process damage tolerance, a 2nd generation scalable porous silica (k=2.1) has been developed by reducing pore-size to 2/3. Using this new low-k film, hybrid dual-damascene interconnects were successfully fabricated with low thermal stress and high adhesion strength. Packaging performance of the six-layered multilevel interconnects was also evaluated with wire-bonding and temperature-cycle tests.
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