{"title":"Recent Progress of SiC-MOSFETs and Their Futures-Competion with state-of-the-art Si-IGBT-","authors":"N. Iwamuro","doi":"10.23919/ICEP.2019.8733597","DOIUrl":null,"url":null,"abstract":"SiC MOSFET device is a one of superior candidates as next power semiconductor device structure for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the optimized structures and operations for SiC MOSFETs with not only the extremely low on resistance but also much higher reliability. In this paper, an overview on recent device technologies of SiC MOSFETs is introduced.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733597","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
SiC MOSFET device is a one of superior candidates as next power semiconductor device structure for many power transform systems. Owing to high requirement of stability for the whole application systems, it is essential to explore the optimized structures and operations for SiC MOSFETs with not only the extremely low on resistance but also much higher reliability. In this paper, an overview on recent device technologies of SiC MOSFETs is introduced.
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