{"title":"Improvement in electrical properties of SIMOX by high-temperature oxidation","authors":"B. Mrstik, P. McMarr, H. Hughes, M. Anc, W. Krull","doi":"10.1109/SOI.1995.526516","DOIUrl":null,"url":null,"abstract":"For the SIMOX process to become a viable technology, it must be capable of producing a buried oxide (BOX) layer with a high breakdown field and a low density of defects which short the superficial Si layer with the substrate. In this paper we discuss a low cost technique for significantly improving the electrical properties of the BOX. The process is compatible with the formation of a superficial Si layer with a very low density of dislocations.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526516","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
For the SIMOX process to become a viable technology, it must be capable of producing a buried oxide (BOX) layer with a high breakdown field and a low density of defects which short the superficial Si layer with the substrate. In this paper we discuss a low cost technique for significantly improving the electrical properties of the BOX. The process is compatible with the formation of a superficial Si layer with a very low density of dislocations.
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