{"title":"Radiation characterization of a low power 0.5 /spl mu/m SOI-CMOS technology","authors":"T.O. Vu, A. Nguyen, J. Cable","doi":"10.1109/SOI.1995.526455","DOIUrl":null,"url":null,"abstract":"SOI technologies such as bonded and SIMOX are good candidates to replace SOS in environments requiring radiation hardness up to and above 1 Mrad. We have developed a 0.5 /spl mu/m SOI-CMOS process that is rad-hard to at least 300Krad(SiO2). The process and device characteristics, along with radiation results, are presented.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
SOI technologies such as bonded and SIMOX are good candidates to replace SOS in environments requiring radiation hardness up to and above 1 Mrad. We have developed a 0.5 /spl mu/m SOI-CMOS process that is rad-hard to at least 300Krad(SiO2). The process and device characteristics, along with radiation results, are presented.
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