H. Fourre, O. Schuler, J. Pesant, A. Leroy, A. Cappy
{"title":"Implant isolation for lattice matched InGaAs/InAlAs/InP modulation doped field effect transistor realisation","authors":"H. Fourre, O. Schuler, J. Pesant, A. Leroy, A. Cappy","doi":"10.1109/ICIPRM.1996.492046","DOIUrl":null,"url":null,"abstract":"We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H/sup +/, B/sup +/, F/sup +/ and Ar/sup +/), for different ion doses (10/sup 12/-10/sup 15/ cm/sup -2/) and after post implant annealing (100/spl deg/C-400/spl deg/C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 M/spl Omega///spl square/ using Ar/sup +/ implantation with a dose of 1.10/sup 15/ cm/sup -2/ and 10 hours annealing at 300/spl deg/C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"156 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have investigated implant isolation for lattice matched InGaAs/InAlAs/InP Modulation Doped Field Effect Transistors (MODFETs). The sheet resistances of the MODFET layers were measured after implantation of different ions species (H/sup +/, B/sup +/, F/sup +/ and Ar/sup +/), for different ion doses (10/sup 12/-10/sup 15/ cm/sup -2/) and after post implant annealing (100/spl deg/C-400/spl deg/C) for different annealing time (10 min-24 h). The best measured sheet resistance was about 30 M/spl Omega///spl square/ using Ar/sup +/ implantation with a dose of 1.10/sup 15/ cm/sup -2/ and 10 hours annealing at 300/spl deg/C. This is the best implant isolation result obtained for InP lattice matched MODFET layer to our knowledge. This result allows us to realise planar InP lattice matched MODFET with a good isolation.
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