{"title":"Thermal chemical vapor deposition of epitaxial germanium tin alloys","authors":"Y. Kim, Yi-Chiau Huang, E. Sanchez, S. Chu","doi":"10.1109/ISTDM.2014.6874699","DOIUrl":null,"url":null,"abstract":"A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A pseudomorphic growth of GeSn epitaxial films with [Sn] up to 16 at.% on relaxed Ge underlayer was demonstrated in a reduced pressure thermal chemical vapor deposition chamber. GeSn film resistivity can be as low as 0.3 mOhm-cm by in-situ boron doping of GeSn. Also, a GeSiSn film growth containing [Si]~24 at.% and [Sn]~4 at.% was achieved by flowing SiH4 during GeSn growth.
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