Performance Comparison between capacitively driven low swing and conventional interconnects for CU and carbon nanotube wire technologies

Kyung-Hoae Koo, P. Kapur, Jeongha Park, Hyunjong Noh, S. Wong, K. Saraswat
{"title":"Performance Comparison between capacitively driven low swing and conventional interconnects for CU and carbon nanotube wire technologies","authors":"Kyung-Hoae Koo, P. Kapur, Jeongha Park, Hyunjong Noh, S. Wong, K. Saraswat","doi":"10.1109/IITC.2009.5090330","DOIUrl":null,"url":null,"abstract":"The on-chip interconnect bottleneck with conventional Cu/low-k and delay optimized repeater scheme presents a compelling reason to explore novel interconnect circuit architectures. The capacitively driven low-swing interconnect (CDLSI) has the potential to affect a significant energy saving and latency reduction. The purpose of this work is two fold: Firstly, to develop an accurate analytical, optimized model for CDLSI wire scheme; Secondly, to quantify and compare the delay and energy expenditure for not only different interconnect circuit schemes, but also various future technologies such as Cu, carbon nanotube and optics. We find that CDLSI circuit scheme outperforms the conventional interconnects in latency and energy per bit for lower bandwidth requirement, while these advantages degrade for higher bandwidth requirements.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"2000 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

The on-chip interconnect bottleneck with conventional Cu/low-k and delay optimized repeater scheme presents a compelling reason to explore novel interconnect circuit architectures. The capacitively driven low-swing interconnect (CDLSI) has the potential to affect a significant energy saving and latency reduction. The purpose of this work is two fold: Firstly, to develop an accurate analytical, optimized model for CDLSI wire scheme; Secondly, to quantify and compare the delay and energy expenditure for not only different interconnect circuit schemes, but also various future technologies such as Cu, carbon nanotube and optics. We find that CDLSI circuit scheme outperforms the conventional interconnects in latency and energy per bit for lower bandwidth requirement, while these advantages degrade for higher bandwidth requirements.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
电容驱动低摆幅与传统铜和碳纳米管线互连技术的性能比较
传统的Cu/低k和延迟优化中继器方案的片上互连瓶颈提出了探索新型互连电路架构的令人信服的理由。电容驱动的低摆幅互连(CDLSI)具有显著的节能和降低延迟的潜力。本工作的目的有两个方面:第一,建立一个准确的CDLSI线材方案分析优化模型;其次,量化和比较不同互连电路方案以及各种未来技术(如铜,碳纳米管和光学)的延迟和能量消耗。我们发现CDLSI电路方案在较低带宽要求下在延迟和每比特能量方面优于传统互连,而这些优势在较高带宽要求下会降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond New multi-step UV curing process for porogen-based porous SiOC Thin low-k SiOC(N) dielectric / ruthenium stacked barrier technology Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier Co-design of reliable signal and power interconnects in 3D stacked ICs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1