C. Hayzelden, C. Ygartua, T. Casavant, M. Slessor, A. Srivatsa, M. Guévremont, P. Stevens, M. Young, T. Lu, R. Zhang, C. Treadwell, D. Soltz, J. Lauber, M. Krumbuegel, R. Fiordalice, S. Lange, R. Marella, S. Ashkenaz, K. Monahan, T. K. Tran, J. Leu
{"title":"Process module control for low-/spl kappa/ dielectrics [CVD]","authors":"C. Hayzelden, C. Ygartua, T. Casavant, M. Slessor, A. Srivatsa, M. Guévremont, P. Stevens, M. Young, T. Lu, R. Zhang, C. Treadwell, D. Soltz, J. Lauber, M. Krumbuegel, R. Fiordalice, S. Lange, R. Marella, S. Ashkenaz, K. Monahan, T. K. Tran, J. Leu","doi":"10.1109/ISSM.2000.993630","DOIUrl":null,"url":null,"abstract":"A process control system is composed of a variety of elements, from measurement technologies and techniques, through sampling strategies and analysis algorithms, to data-driven action plans. All components are required to ensure a stable process, however, effective control is founded upon a set of easily measured, yield-relevant parameters. In this work, we describe the use of a toolset and methodology to provide such parameters, and explore sampling and analysis components for the evaluation, development, and control of low-/spl kappa/ dielectric processes. In comparison to historically-employed interline dielectric (ILD) materials such as SiO/sub 2/, these low-/spl kappa/ materials and processes present significant integration, reliability, and stability concerns. A particularly sensitive parameter is the dielectric constant itself. Damage from high-power ultraviolet inspection techniques may also present challenges. As these relatively immature processes migrate into volume production, these same tools and parameters can be used to monitor the low-/spl kappa/ process module, improve baseline yield, and control excursions.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2000.993630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A process control system is composed of a variety of elements, from measurement technologies and techniques, through sampling strategies and analysis algorithms, to data-driven action plans. All components are required to ensure a stable process, however, effective control is founded upon a set of easily measured, yield-relevant parameters. In this work, we describe the use of a toolset and methodology to provide such parameters, and explore sampling and analysis components for the evaluation, development, and control of low-/spl kappa/ dielectric processes. In comparison to historically-employed interline dielectric (ILD) materials such as SiO/sub 2/, these low-/spl kappa/ materials and processes present significant integration, reliability, and stability concerns. A particularly sensitive parameter is the dielectric constant itself. Damage from high-power ultraviolet inspection techniques may also present challenges. As these relatively immature processes migrate into volume production, these same tools and parameters can be used to monitor the low-/spl kappa/ process module, improve baseline yield, and control excursions.