{"title":"Device simulation of all-polymer thin-film transistors","authors":"C. Detcheverry, M. Matters","doi":"10.1109/ESSDERC.2000.194781","DOIUrl":null,"url":null,"abstract":"This paper presents an analytical model which describes the device characteristics of all-polymer thin-film transistors with channel lengths in the range of 5 to 20 μm. The model contains a limited number of parameters and can be easily implemented in a circuit simulator. In particular, the description of the mobility in the model includes the experimentally observed dependence of the mobility on the gate","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194781","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper presents an analytical model which describes the device characteristics of all-polymer thin-film transistors with channel lengths in the range of 5 to 20 μm. The model contains a limited number of parameters and can be easily implemented in a circuit simulator. In particular, the description of the mobility in the model includes the experimentally observed dependence of the mobility on the gate
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