Device simulation of all-polymer thin-film transistors

C. Detcheverry, M. Matters
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引用次数: 7

Abstract

This paper presents an analytical model which describes the device characteristics of all-polymer thin-film transistors with channel lengths in the range of 5 to 20 μm. The model contains a limited number of parameters and can be easily implemented in a circuit simulator. In particular, the description of the mobility in the model includes the experimentally observed dependence of the mobility on the gate
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全聚合物薄膜晶体管的器件仿真
本文提出了通道长度在5 ~ 20 μm范围内的全聚合物薄膜晶体管器件特性的解析模型。该模型包含有限数量的参数,可以很容易地在电路模拟器中实现。特别地,模型中迁移率的描述包括实验观察到的迁移率对栅极的依赖
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