The effective method of reducing slurry for interlayer dielectric CMP

K. Ishimoto
{"title":"The effective method of reducing slurry for interlayer dielectric CMP","authors":"K. Ishimoto","doi":"10.1109/ISSM.2000.993637","DOIUrl":null,"url":null,"abstract":"Recently chemical mechanical polishing (CMP) became a routine process in semiconductor manufacturing process. However one problem is that the slurry consumption in CMP process is very large. Some experiments are aimed at reducing slurry consumption. Our research showed that the slurry was needed only at the start of polishing in ILD CMP and that we could planarize without slurry after the midpoint of polishing. This paper describes a method of reducing slurry for interlayer dielectric CMP and we predict that the application of this method to our ILD CMP process could reduce waste slurry by about 50%.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2000.993637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Recently chemical mechanical polishing (CMP) became a routine process in semiconductor manufacturing process. However one problem is that the slurry consumption in CMP process is very large. Some experiments are aimed at reducing slurry consumption. Our research showed that the slurry was needed only at the start of polishing in ILD CMP and that we could planarize without slurry after the midpoint of polishing. This paper describes a method of reducing slurry for interlayer dielectric CMP and we predict that the application of this method to our ILD CMP process could reduce waste slurry by about 50%.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
层间介质CMP的有效减浆方法
近年来,化学机械抛光(CMP)已成为半导体制造过程中的常规工艺。然而,CMP工艺的一个问题是浆料消耗非常大。一些试验旨在减少浆料消耗。我们的研究表明,在ILD CMP中,仅在抛光开始时需要浆液,并且在抛光中点之后,我们可以不使用浆液进行平面化。本文介绍了一种层间介质CMP中减少浆料的方法,并预测将该方法应用于我们的ILD CMP工艺可以减少约50%的废浆料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Process module control for low-/spl kappa/ dielectrics [CVD] A next queue algorithm in real time dispatching system of semiconductor manufacturing New identification system for individual wafer management International reuse program in a green field Fab Environmental management activities by NEC electron devices
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1