Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl
{"title":"Strained Si nanowire tunnel FETs and inverters","authors":"Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl","doi":"10.1109/E3S.2013.6705867","DOIUrl":null,"url":null,"abstract":"Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/E3S.2013.6705867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].
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