Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705862
Seung H. Kang
A spintronic integrated circuit (IC) is made of a combination of a semiconductor IC and a dense array of nanometer-scale magnetic tunnel junctions (MTJ). With growing scientific and engineering interest, the spintronics IC community has recently achieved significant discoveries and engineering breakthroughs [1]. Most recognized is the emergence of STT-MRAM. Key findings and advances in materials, devices, and circuits have triggered extensive industry-wide R&D efforts in pursuit of an alternative memory which may not only overcome acute tradeoffs in performance and power, but also extend physical scaling limits. In parallel, various forms of logic devices and circuits based on MTJ have been demonstrated, opening a possible path for spintronic IC to expand beyond STT-MRAM.
{"title":"STT-MRAM for energy-efficient mobile computing and connectivity: System-on-chip perspectives","authors":"Seung H. Kang","doi":"10.1109/E3S.2013.6705862","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705862","url":null,"abstract":"A spintronic integrated circuit (IC) is made of a combination of a semiconductor IC and a dense array of nanometer-scale magnetic tunnel junctions (MTJ). With growing scientific and engineering interest, the spintronics IC community has recently achieved significant discoveries and engineering breakthroughs [1]. Most recognized is the emergence of STT-MRAM. Key findings and advances in materials, devices, and circuits have triggered extensive industry-wide R&D efforts in pursuit of an alternative memory which may not only overcome acute tradeoffs in performance and power, but also extend physical scaling limits. In parallel, various forms of logic devices and circuits based on MTJ have been demonstrated, opening a possible path for spintronic IC to expand beyond STT-MRAM.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117289780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705858
S. Alkharabsheh, B. Sammakia
This work presents the effect of servers and racks heat capacity on common dynamic scenarios in data centers. Room level Computational Fluid Dynamics (CFD) model is developed to simulate airflow rate and servers power fluctuations in a representative data center. It is found that the servers heat capacity has a significant effect on the dynamics of data centers. An order of magnitude increase is observed in the time constant associated with change in temperatures compared with models that neglects the effect of servers heat capacity. It is also found that the rack chassis heat capacity has a slight influence on temperatures rate of change, thus it can be neglected without affecting the accuracy of the results and also reducing the computational time.
{"title":"Modeling racks and servers heat capacity in a physics based dynamic CFD model of data centers","authors":"S. Alkharabsheh, B. Sammakia","doi":"10.1109/E3S.2013.6705858","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705858","url":null,"abstract":"This work presents the effect of servers and racks heat capacity on common dynamic scenarios in data centers. Room level Computational Fluid Dynamics (CFD) model is developed to simulate airflow rate and servers power fluctuations in a representative data center. It is found that the servers heat capacity has a significant effect on the dynamics of data centers. An order of magnitude increase is observed in the time constant associated with change in temperatures compared with models that neglects the effect of servers heat capacity. It is also found that the rack chassis heat capacity has a slight influence on temperatures rate of change, thus it can be neglected without affecting the accuracy of the results and also reducing the computational time.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129596757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705869
A. Javey
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. To ensure effective gate control, semiconductors with ultrathin body thickness are needed. At such regime, strong quantum confinement usually comes into play; therefore, we call these ultrathin compound semiconductor membranes as quantum membranes (QMs). Compound quantum membranes heterogeneously integrated on Si substrates have been studied by us, combining the high mobility of compound semiconductors and the well-established Si technology.
{"title":"Quantum membranes: A new materials platform for future electronics","authors":"A. Javey","doi":"10.1109/E3S.2013.6705869","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705869","url":null,"abstract":"Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. To ensure effective gate control, semiconductors with ultrathin body thickness are needed. At such regime, strong quantum confinement usually comes into play; therefore, we call these ultrathin compound semiconductor membranes as quantum membranes (QMs). Compound quantum membranes heterogeneously integrated on Si substrates have been studied by us, combining the high mobility of compound semiconductors and the well-established Si technology.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121283940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705873
R. Sarpeshkar
Summary form only given. Nature is a great analog and digital circuit designer. She has innovated circuits in the biochemical, biomechanical, and bioelectronic domains that operate robustly with highly noisy and imprecise parts and with incredibly low levels of energy. Her impressive accomplishment is largely due to the fact that she uses both analog (graded) and digital (all-or-none) circuits within her cells to sense, actuate, compute, and communicate [1]. Analog and bio-inspired approaches that mimic nature can also create ultra-energy-efficient systems: For example, we show how neural prosthetics of the future such as brain-machine interfaces for the paralyzed can be made so energy efficient [1] that they can be powered from a novel glucose fuel cell that harvests energy from bodily fluids [2]. I also discuss how a positive-feedback loop between analog circuits and cell biology may enable similar synergistic improvements in synthetic and systems biology.
{"title":"Ultra energy efficient systems in biology, engineering, and medicine","authors":"R. Sarpeshkar","doi":"10.1109/E3S.2013.6705873","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705873","url":null,"abstract":"Summary form only given. Nature is a great analog and digital circuit designer. She has innovated circuits in the biochemical, biomechanical, and bioelectronic domains that operate robustly with highly noisy and imprecise parts and with incredibly low levels of energy. Her impressive accomplishment is largely due to the fact that she uses both analog (graded) and digital (all-or-none) circuits within her cells to sense, actuate, compute, and communicate [1]. Analog and bio-inspired approaches that mimic nature can also create ultra-energy-efficient systems: For example, we show how neural prosthetics of the future such as brain-machine interfaces for the paralyzed can be made so energy efficient [1] that they can be powered from a novel glucose fuel cell that harvests energy from bodily fluids [2]. I also discuss how a positive-feedback loop between analog circuits and cell biology may enable similar synergistic improvements in synthetic and systems biology.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123777543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705876
C. Yeung, A. Khan, S. Salahuddin, C. Hu
We present a simulation-based analysis of device design for ultra-thin body non-hysteretic Negative-Capacitance-FET (NCFET). Subthreshold swing dependencies on the relationship between the negative capacitance (from ferroelectric) and the positive capacitance (from the underlying MOSFET) are illustrated. To achieve less than 60mV/decade swing and hysteresis free operation, the negative capacitance needs to be smaller than the gate oxide capacitance, and be larger than the total underlying MOSFET capacitance within the operating voltage.
{"title":"Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs","authors":"C. Yeung, A. Khan, S. Salahuddin, C. Hu","doi":"10.1109/E3S.2013.6705876","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705876","url":null,"abstract":"We present a simulation-based analysis of device design for ultra-thin body non-hysteretic Negative-Capacitance-FET (NCFET). Subthreshold swing dependencies on the relationship between the negative capacitance (from ferroelectric) and the positive capacitance (from the underlying MOSFET) are illustrated. To achieve less than 60mV/decade swing and hysteresis free operation, the negative capacitance needs to be smaller than the gate oxide capacitance, and be larger than the total underlying MOSFET capacitance within the operating voltage.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115256746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705867
Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl
Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].
{"title":"Strained Si nanowire tunnel FETs and inverters","authors":"Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl","doi":"10.1109/E3S.2013.6705867","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705867","url":null,"abstract":"Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123885228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705879
Jiahao Kang, W. Cao, D. Sarkar, Yasin Khatami, Wei Liu, K. Banerjee
2-dimensional (2D) electronic materials such as graphene have emerged as attractive candidates for tunnel devices and circuits for achieving ultra-high energy-efficiency. This paper highlights a few novel tunnel device and circuit concepts based on graphene. Major challenges of 2D materials relevant to such applications are discussed as well.
{"title":"2-Dimensional tunnel devices and circuits on graphene: Opportunities and challenges","authors":"Jiahao Kang, W. Cao, D. Sarkar, Yasin Khatami, Wei Liu, K. Banerjee","doi":"10.1109/E3S.2013.6705879","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705879","url":null,"abstract":"2-dimensional (2D) electronic materials such as graphene have emerged as attractive candidates for tunnel devices and circuits for achieving ultra-high energy-efficiency. This paper highlights a few novel tunnel device and circuit concepts based on graphene. Major challenges of 2D materials relevant to such applications are discussed as well.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128553648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705861
Ashkan Borna, M. Takamiya, J. Rabaey
Moore's law, the driving force behind the semiconductor for the past decades, is endangered from several angles. Artifacts of scaled dimensions, yield, reliability, fabrication cost and device performance degradation all raise legitimate concerns about current trends of mere transferring same architectures to more advanced substrates.
{"title":"The path toward energy-efficient inference engine architectures on scaled and beyond-CMOS fabrics","authors":"Ashkan Borna, M. Takamiya, J. Rabaey","doi":"10.1109/E3S.2013.6705861","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705861","url":null,"abstract":"Moore's law, the driving force behind the semiconductor for the past decades, is endangered from several angles. Artifacts of scaled dimensions, yield, reliability, fabrication cost and device performance degradation all raise legitimate concerns about current trends of mere transferring same architectures to more advanced substrates.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131746863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705859
Jörg Lenhardt, W. Schiffmann, Patrick Eitschberger, J. Keller
High performance servers of data centers for cloud computing consume immense amounts of energy even though they are usually underutilized because they provide huge computing capabilities. In times when not all of those computing capabilities are needed the task to be solved is how to distribute the load in a power-efficient manner. The research question is: How should a requested compute load be mapped to the available physical servers so that it is executed with the minimum power consumption? The requested load is measured in operations per seconds and changes over time. In this work, we assume that it is divisible which means that portions of the requested load can be freely assigned to different servers. This assumption is plausible because the load of a typical compute cloud consists of many virtual machines (VM). Our investigations are based on the SPECpower benchmark, retrieved Jan 9, 2013. SPECpower relies on Server Side Java (SSJ) for measuring power consumption of servers at different load levels running Java applications [7].
{"title":"Power-efficient server utilization in compute clouds","authors":"Jörg Lenhardt, W. Schiffmann, Patrick Eitschberger, J. Keller","doi":"10.1109/E3S.2013.6705859","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705859","url":null,"abstract":"High performance servers of data centers for cloud computing consume immense amounts of energy even though they are usually underutilized because they provide huge computing capabilities. In times when not all of those computing capabilities are needed the task to be solved is how to distribute the load in a power-efficient manner. The research question is: How should a requested compute load be mapped to the available physical servers so that it is executed with the minimum power consumption? The requested load is measured in operations per seconds and changes over time. In this work, we assume that it is divisible which means that portions of the requested load can be freely assigned to different servers. This assumption is plausible because the load of a typical compute cloud consists of many virtual machines (VM). Our investigations are based on the SPECpower benchmark, retrieved Jan 9, 2013. SPECpower relies on Server Side Java (SSJ) for measuring power consumption of servers at different load levels running Java applications [7].","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"331 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116359575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-10-01DOI: 10.1109/E3S.2013.6705883
Seunghyun Lee, A. Tang, J. Mcvittie, H. Wong
Nanoelectronics based on 2-dimensional layered materials is a field of rapidly growing interest. In particular, graphene and transition metal dichalcogenides (TMD) exhibit remarkable properties that can be exploited for many applications. Most electronic devices based on 2D materials, however, focus on the electronic properties of the material: 2D materials are usually utilized as semiconducting pathways for carriers (e.g. channels in transistors) or as conductors (e.g. interconnects, transparent conductor). In this work, we investigate the use of 2D materials as interfacial layers to improve the contacts of Nano-Electro-Mechanical(NEM) switches exploiting its surface and mechanical properties. In this study, the 2D layers will be used as the electrical contacts for the moving mechanical relays.
{"title":"NEM relays using 2-dimensional nanomaterials for low energy contacts","authors":"Seunghyun Lee, A. Tang, J. Mcvittie, H. Wong","doi":"10.1109/E3S.2013.6705883","DOIUrl":"https://doi.org/10.1109/E3S.2013.6705883","url":null,"abstract":"Nanoelectronics based on 2-dimensional layered materials is a field of rapidly growing interest. In particular, graphene and transition metal dichalcogenides (TMD) exhibit remarkable properties that can be exploited for many applications. Most electronic devices based on 2D materials, however, focus on the electronic properties of the material: 2D materials are usually utilized as semiconducting pathways for carriers (e.g. channels in transistors) or as conductors (e.g. interconnects, transparent conductor). In this work, we investigate the use of 2D materials as interfacial layers to improve the contacts of Nano-Electro-Mechanical(NEM) switches exploiting its surface and mechanical properties. In this study, the 2D layers will be used as the electrical contacts for the moving mechanical relays.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"695 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123277415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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