{"title":"Impacts of Channel Doping on NBTI Reliability and Variability in Nanoscale FinFETs","authors":"Zhe Zhang, Runsheng Wang, Yangyuan Wang, Ru Huang","doi":"10.1109/IPFA47161.2019.8984834","DOIUrl":null,"url":null,"abstract":"In this paper, the channel doping concentration (Nch) dependence of negative bias temperature instability (NBTI) reliability and variability is comprehensively studied using ‘atomistic’ TCAD simulations. The ΔVth distributions and current density distributions at different Nch are investigated. It is helpful for understanding of NBTI degradation in nanoscale devices.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the channel doping concentration (Nch) dependence of negative bias temperature instability (NBTI) reliability and variability is comprehensively studied using ‘atomistic’ TCAD simulations. The ΔVth distributions and current density distributions at different Nch are investigated. It is helpful for understanding of NBTI degradation in nanoscale devices.
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