Detecting elementary particles using hybrid pixel detectors at the lhc and beyond

M. Campbell
{"title":"Detecting elementary particles using hybrid pixel detectors at the lhc and beyond","authors":"M. Campbell","doi":"10.1109/IEDM.2014.7047028","DOIUrl":null,"url":null,"abstract":"At the CERN Large Hadron Collider bunches of high energy protons (and ions) collide at the heart of 4 massive experiments. Hybrid pixel detectors identify and tag individual particle tracks helping physicists to select the handful of interesting events from the millions created per second. Applications beyond LHC will also be described.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

At the CERN Large Hadron Collider bunches of high energy protons (and ions) collide at the heart of 4 massive experiments. Hybrid pixel detectors identify and tag individual particle tracks helping physicists to select the handful of interesting events from the millions created per second. Applications beyond LHC will also be described.
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在大型强子对撞机及其他地方使用混合像素探测器探测基本粒子
在欧洲核子研究中心的大型强子对撞机中,高能质子(和离子)在4个大型实验的中心发生碰撞。混合像素探测器识别和标记单个粒子轨迹,帮助物理学家从每秒产生的数百万个事件中选择少数有趣的事件。本文还将介绍大型强子对撞机以外的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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