J. Schulze, A. Blech, I. Fischer, D. Hahnel, Sandra Naasz, Eva-Maria Tropper
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Abstract
We presented first results on the fabrication and characterization of vertical Ge heterojunction GAA-TFETs with a Ge0.92Sn0.08-δ-layer at the tunneling junction with transistor body diameters from 10 μm down to 250 nm (pillar geometry).
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