A Tunable SiGe BiCMOS Quadrature LO Source with 31% Tuning Range for L, C and X-band Space-borne Remote Sensing

M. Kucharski, M. Klemm, R. Piesiewicz, V. Valenta
{"title":"A Tunable SiGe BiCMOS Quadrature LO Source with 31% Tuning Range for L, C and X-band Space-borne Remote Sensing","authors":"M. Kucharski, M. Klemm, R. Piesiewicz, V. Valenta","doi":"10.1109/SiRF56960.2023.10046223","DOIUrl":null,"url":null,"abstract":"This paper presents a SiGe BiCMOS tunable quadrature (IQ) local oscillator (LO) source used in multichannel receiver (RX) front-ends for L, C and X-band space applications. The LO is based on a single X-band voltagecontrolled oscillator (VCO) and programmable frequency divider (FD) chain. The VCO implements a common-collector Colpitts topology with a transformer load and butter chain to isolate the VCO tank circuit from the FD. The FD comprises one divide-by2/3 and two divide-by-2 flip-flop based stages enabling division ratios up to 12 to support C and L-band. The circuit provides IQ differential signals in 1. 05-1.9GHz, 4.3-5.9 GHz and 8.6-11.8 GHz range derived from a single 10.2 GHz VCO with 31% tuning range and -99.7dBc/Hz worst case phase noise at lMHz offset from the carrier.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper presents a SiGe BiCMOS tunable quadrature (IQ) local oscillator (LO) source used in multichannel receiver (RX) front-ends for L, C and X-band space applications. The LO is based on a single X-band voltagecontrolled oscillator (VCO) and programmable frequency divider (FD) chain. The VCO implements a common-collector Colpitts topology with a transformer load and butter chain to isolate the VCO tank circuit from the FD. The FD comprises one divide-by2/3 and two divide-by-2 flip-flop based stages enabling division ratios up to 12 to support C and L-band. The circuit provides IQ differential signals in 1. 05-1.9GHz, 4.3-5.9 GHz and 8.6-11.8 GHz range derived from a single 10.2 GHz VCO with 31% tuning range and -99.7dBc/Hz worst case phase noise at lMHz offset from the carrier.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于L, C和x波段星载遥感的可调谐SiGe BiCMOS正交LO源,其调谐范围为31%
本文提出了一种SiGe BiCMOS可调正交(IQ)本振(LO)源,用于L、C和x波段空间应用的多通道接收机(RX)前端。该LO基于单个x波段压控振荡器(VCO)和可编程分频器(FD)链。VCO采用共集电极Colpitts拓扑结构,带有变压器负载和黄油链,将VCO油箱电路与FD隔离开来。FD包括一个除以2/3和两个除以2的触发器级,使分割比高达12,支持C和l波段。电路在1中提供IQ差分信号。05-1.9GHz, 4.3-5.9 GHz和8.6-11.8 GHz范围来自单个10.2 GHz VCO,具有31%的调谐范围和-99.7dBc/Hz的最坏情况下相位噪声与载波的lMHz偏移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 42.24 Gb/s Channel Bonding Up-Converter with integrated multi-LO generation in 45nm CMOS Simulation of Built-In Test Equipments based on Avalanche Noise Diodes: Ka-band LNA Case Study RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing SiRF 2023 Cover Page Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1