A 1-GHz operational transconductance amplifier in SOI technology

J. Eggermont, D. Flandre, R. Gillon, J. Colinge
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引用次数: 8

Abstract

This work investigates the feasibility of realisation of SOI CMOS Operational Transconductance Amplifiers (OTA) operating up to 1 GHz. In contrast to a previously published microwave wideband amplifier driving low ohmic resistive line termination, OTAs for Switched-Capacitor (SC) applications need a high impedance and capacitive output node. In addition applications such as sigma-delta converters require fast OTAs. In order to reduce the settling time, the transfer function should also include a minimal amount of poles and zeros. Consequently in spite of its low voltage gain, this single-stage OTA could be of interest for high-frequency applications.
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SOI技术中的1 ghz操作跨导放大器
本研究探讨了实现工作频率高达1ghz的SOI CMOS运算跨导放大器(OTA)的可行性。与之前发布的驱动低欧姆电阻线终端的微波宽带放大器相比,用于开关电容(SC)应用的ota需要高阻抗和容性输出节点。此外,诸如σ - δ转换器之类的应用需要快速ota。为了减少沉降时间,传递函数还应包含最小数量的极点和零点。因此,尽管其电压增益低,但这种单级OTA可能对高频应用感兴趣。
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Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs Front and back gate interface-trap generation due to hot carrier stress in fully depleted SOI/MOSFETs SOI material characterization using optical second harmonic generation Minimum parasitic resistance for ultra-thin SOI MOSFET with high-permittivity gate insulator performed by lateral contact structure Transient effects in floating body SOI NMOSFETs
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