{"title":"Real time in-situ data acquisition using autonomous on-wafer sensor arrays","authors":"M. Freed, M. Kruger, K. Poolla, C. Spanos","doi":"10.1109/ISSM.2000.993624","DOIUrl":null,"url":null,"abstract":"We explore the feasibility of integrating in-situ sensors onto the surface of a silicon wafer, with the objective of placing this wafer into a processing tool to obtain real time measurements. This technique has numerous benefits: increased measurement speed, reduced sensor introduction cost, and increased spatial and temporal information Various sensors and sensor wafers have been developed and tested in a variety of processing tools. Repeatable, real time measurements in harsh environments such as high temperature and plasma have been obtained.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2000.993624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We explore the feasibility of integrating in-situ sensors onto the surface of a silicon wafer, with the objective of placing this wafer into a processing tool to obtain real time measurements. This technique has numerous benefits: increased measurement speed, reduced sensor introduction cost, and increased spatial and temporal information Various sensors and sensor wafers have been developed and tested in a variety of processing tools. Repeatable, real time measurements in harsh environments such as high temperature and plasma have been obtained.