Design-in reliability for over drive applications in advanced technology

Jae-Gyung Ahn, Ping-Chin Yeh, Jane Sowards, Nick Lo, Jonathan Chang
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Abstract

We present the FEOL reliability checking flow in advanced technology especially with over drive applications. We check gate bias values obtained from SPICE transient simulation against the maximum allowed value, Vg_max, to make sure robust gate dielectric reliability. We set up HSPICE MOSRA simulation procedure to let designers check the impact of BTI and HCI to each MOSFET device and the circuit performance at End-of-Lifetime (EOL). From HCI degradation analysis from HSPICE MOSRA, we obtained a good correlation between HCI damage and slew rate and conditions in which HCI degradation is negligible. We discuss on the selection of the stress conditions and monitor conditions to be checked. We applied HSPICE MOSRA to several over drive applications and were able to successfully justify them with careful modeling for HCI and NCHC in addition to BTI.
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设计-在先进技术的过度驱动应用的可靠性
介绍了先进技术特别是超驱动应用下的FEOL可靠性检测流程。我们将SPICE瞬态仿真得到的栅极偏置值与最大允许值Vg_max进行比较,以确保栅极介电可靠性。我们建立了HSPICE MOSRA仿真程序,让设计人员检查BTI和HCI对每个MOSFET器件的影响以及寿命终止(EOL)时的电路性能。从HSPICE MOSRA的HCI降解分析中,我们获得了HCI损伤与回转率以及HCI降解可忽略的条件之间的良好相关性。讨论了应力条件的选择和监测条件的校核。我们将HSPICE MOSRA应用于多个超驱动应用程序,并能够通过对HCI和NCHC以及BTI进行仔细建模来成功地证明它们的合理性。
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