A. Chumakov, D. Bobrovsky, A. Pechenkin, D. V. Savchenkov, G. Sorokoumov
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引用次数: 2
Abstract
The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.
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