G.G. Li, A. R. Forouhi, A. Auberton-Herve, A. Wittkower
{"title":"Optical characterization of silicon-on-insulator","authors":"G.G. Li, A. R. Forouhi, A. Auberton-Herve, A. Wittkower","doi":"10.1109/SOI.1995.526483","DOIUrl":null,"url":null,"abstract":"A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (/spl sigma/), refractive index (n), and extinction coefficient (k) of thin films for SOI. The Forouhi-Bloomer dispersion equation for n and k is used to analyze measured reflectance spectra.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (/spl sigma/), refractive index (n), and extinction coefficient (k) of thin films for SOI. The Forouhi-Bloomer dispersion equation for n and k is used to analyze measured reflectance spectra.
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