S. Deleonibus, O. Faynot, Thomas Ernst, M. Vinet, P. Batude, F. Andrieu, O. Weber, David K. C. Cooper, François Bertin, Hubert Moriceau, L. Dicioccio, T. Signamarcheix, M. Sanquer, X. Jehl, O. Cueto, H. Fanet, F. Martin, H. Okuno, F. Nemouchi, Gilles Poupon, Y. Lamy, D. Gasparutto, X. Baillin, L. Duraffourg, J. Arcamone, L. Perniola, B. D. Salvo, E. Vianello, L. Hutin, C. Poulain, Edith Beigne, R. Tiron, L. Pain, S. Tedesco, S. Barnola, N. Possémé, C. L. Royer, A. Villalon, R. Salot
{"title":"Future challenges and opportunities for heterogeneous process technology. Towards the thin films, Zero Intrinsic Variability devices, Zero Power era","authors":"S. Deleonibus, O. Faynot, Thomas Ernst, M. Vinet, P. Batude, F. Andrieu, O. Weber, David K. C. Cooper, François Bertin, Hubert Moriceau, L. Dicioccio, T. Signamarcheix, M. Sanquer, X. Jehl, O. Cueto, H. Fanet, F. Martin, H. Okuno, F. Nemouchi, Gilles Poupon, Y. Lamy, D. Gasparutto, X. Baillin, L. Duraffourg, J. Arcamone, L. Perniola, B. D. Salvo, E. Vianello, L. Hutin, C. Poulain, Edith Beigne, R. Tiron, L. Pain, S. Tedesco, S. Barnola, N. Possémé, C. L. Royer, A. Villalon, R. Salot","doi":"10.1109/IEDM.2014.7047015","DOIUrl":null,"url":null,"abstract":"Linear scaling CMOS has encountered many hurdles which request new process modules, driven mainly by the maximization of energy efficiency. Fabrication at the sub 10nm node level will request Intrinsic Variability approaching to zero. The rapid growth of mobile, multifunctional and autonomous systems is hardly demanding to reach Zero Power consumption. The solutions to integrate Thin Film based devices, architectures and systems in order to face these challenges are described.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"152 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Linear scaling CMOS has encountered many hurdles which request new process modules, driven mainly by the maximization of energy efficiency. Fabrication at the sub 10nm node level will request Intrinsic Variability approaching to zero. The rapid growth of mobile, multifunctional and autonomous systems is hardly demanding to reach Zero Power consumption. The solutions to integrate Thin Film based devices, architectures and systems in order to face these challenges are described.
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