Failure analysis of low-ohmic shorts using lock-in thermography

K. Wadhwa, R. Schlangen, J. Liao, T. Ton, H. Marks
{"title":"Failure analysis of low-ohmic shorts using lock-in thermography","authors":"K. Wadhwa, R. Schlangen, J. Liao, T. Ton, H. Marks","doi":"10.1109/IPFA.2014.6898146","DOIUrl":null,"url":null,"abstract":"This paper will present the non-destructive Lock-in thermography (LIT) technique and its application in detecting low-ohmic power shorts in 28 nm GPU (Graphics processing units). LIT was successful in detecting power shorts within die and package down to 5 Ohms within seconds, leading to accurate and efficient root cause analysis.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper will present the non-destructive Lock-in thermography (LIT) technique and its application in detecting low-ohmic power shorts in 28 nm GPU (Graphics processing units). LIT was successful in detecting power shorts within die and package down to 5 Ohms within seconds, leading to accurate and efficient root cause analysis.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
低欧姆短路的锁相热成像失效分析
本文介绍了无损锁相热成像技术(LIT)及其在28nm图形处理器(GPU)低欧姆功率短路检测中的应用。LIT成功地在几秒钟内检测到芯片和封装内低至5欧姆的电源短路,从而实现准确有效的根本原因分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On-chip device and circuit diagnostics on advanced technology nodes by nanoprobing Study and mechanism of static scanning laser fault isolation on embed SRAM function fail Detailed package failure analysis on short failures after high temperature storage Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width Gate oxide rupture localization by photon emission microscopy with the combination of Lock-in IR-OBIRCH
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1