Radiation-Hardened Memory Cell for Ultralow Power Space Applications

Chunhua Qi, G. Zhai, Guoliang Ma, Tianqi Wang, Chaoming Liu, Liyi Xiao, Heyi Li, Yanqing Zhang, Kairui Guo, Mingxue Huo
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引用次数: 1

Abstract

In this paper, a novel radiation hardened memory cell for low-voltage operation and ultralow power space applications is proposed, and named as RHDMC. By special layout design, RHDMC can not only tolerate single event upset, but also can mitigate single event multiple upsets. Compared with recently published low power memory cell for low-voltage operation, simulation results (not on experimental data) show that, at the expense of a 129.5% area overhead, the proposed memory cell can provide much lower power consumption during SEU occurrence. To make comparisons, access time and power are also investigated between our proposed memory and LA13T.
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用于超低功耗空间应用的抗辐射存储单元
本文提出了一种适用于低电压和超低功耗空间应用的新型辐射强化存储单元,命名为RHDMC。通过特殊的布局设计,RHDMC既能承受单次倾覆,又能减轻单次多次倾覆。与最近发表的用于低压工作的低功耗存储单元相比,仿真结果(而不是实验数据)表明,在以129.5%的面积开销为代价的情况下,所提出的存储单元可以在SEU发生时提供更低的功耗。为了进行比较,我们还研究了我们提出的存储器和LA13T之间的访问时间和功耗。
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