P. Allred, M. Myronov, S. Rhead, R. Warburton, G. Intermite, G. Buller, D. Leadley
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引用次数: 1
Abstract
SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.
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