{"title":"An Active Reflection Phase Shifter with High Gain for Reconfigurable Reflectarrays above 0.24 THz","authors":"E. Kunakovskaya, A. Ulusoy","doi":"10.1109/SiRF56960.2023.10046266","DOIUrl":null,"url":null,"abstract":"This work presents a high frequency, high gain reflection-type phase shifter based on a reflection amplifier topology. A transistor switch within the amplifier acts as the phase-shifting part that can be digitally controlled and provides 1-bit phase resolution. The fabricated phase shifter is implemented in 0.13 $\\mu$mSiGe HBT technology, and the measured results show a reflection gain of 10.2/10.9 dB in two operational states with a phase change of 179° at 257.5 GHz. The phase-shifter core occupies only 0.007 mm2 of IC area.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046266","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a high frequency, high gain reflection-type phase shifter based on a reflection amplifier topology. A transistor switch within the amplifier acts as the phase-shifting part that can be digitally controlled and provides 1-bit phase resolution. The fabricated phase shifter is implemented in 0.13 $\mu$mSiGe HBT technology, and the measured results show a reflection gain of 10.2/10.9 dB in two operational states with a phase change of 179° at 257.5 GHz. The phase-shifter core occupies only 0.007 mm2 of IC area.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
