{"title":"Prospects of emerging new memory technologies","authors":"Sung-young Lee, Keunwoo Kim","doi":"10.1109/ICICDT.2004.1309904","DOIUrl":null,"url":null,"abstract":"New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric RAM, Phase change RAM, and Magnetic RAM appear to be most promising for commercialization. In this paper, these memories will be reviewed in respect of current technology status, technical challenges encountered and solutions for technological barriers.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
New types of memories with potentially ideal properties are topic of growing interest. Among the candidates, Ferroelectric RAM, Phase change RAM, and Magnetic RAM appear to be most promising for commercialization. In this paper, these memories will be reviewed in respect of current technology status, technical challenges encountered and solutions for technological barriers.
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