High mobility SiGe shell-Si core omega gate pFETS

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159327
H. Adhikari, H. Harris, Casey Smith, Ji-Woon Yang, B. Coss, S. Parthasarathy, B. Nguyen, P. Patruno, T. Krishnamohan, I. Cayrefourcq, P. Majhi, R. Jammy
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引用次数: 6

Abstract

Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for (100) oriented fins compared to Si omega gate devices. Performance improvement is demonstrated because of higher mobility and inherent epitaxial strain, while the external resistance in the two SiGe and Si omega FETs is comparable. Performance can further be improved by uniaxial compressive stress.
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高迁移率硅壳-硅芯欧米茄栅极晶体管
与Si ω栅极器件相比，具有SiGe壳-Si芯的ω栅极型pfet在(110)取向鳍上的迁移率提高了30%，在(100)取向鳍上的迁移率提高了46%。由于更高的迁移率和固有的外延应变，性能得到了改善，而两种SiGe和Si omega fet的外部电阻相当。单轴压应力可以进一步改善性能。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2009 International Symposium on VLSI Technology, Systems, and Applications
2009 International Symposium on VLSI Technology, Systems, and Applications
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