A Compact Physics Analytical Model for Hot-Carrier Degradation

Abstract

We develop and validate a fully analytical model for hot-carrier degradation based on a thorough description of the physical picture behind this reliability phenomenon. This approach captures and links carrier transport, modeling of the Si-H bond-breakage mechanisms, and simulations of the degraded devices. All quantities evaluated within the model are described by analytical expressions and time consuming TCAD simulations are therefore avoided. We show that the model can capture measured dependencies of the normalized linear drain current change on stress time with good accuracy.