R. Bauknecht, H. Schneibel, J. Schmid, H. Melchior
{"title":"A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors","authors":"R. Bauknecht, H. Schneibel, J. Schmid, H. Melchior","doi":"10.1109/ICIPRM.1996.491934","DOIUrl":null,"url":null,"abstract":"A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f/sub T/=66 GHz and f/sub max/=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 /spl Omega/ and current swings of 120 mA.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f/sub T/=66 GHz and f/sub max/=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 /spl Omega/ and current swings of 120 mA.
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