Wideband CMOS mixer using differential circuit transconductance linearization technique

Abstract

In this paper, a highly linear wideband down-conversion mixer using multiple gated transistor technique (MGTR) is presented. The mixer is designed and fabricated in 0.18-μm 1P6M RF CMOS process. To achieve high IIP3 performance, the MGTR technique is implemented both in the transconductance stage and the output buffer. An achievement of 0.6~7.2 dBm IIP3 operating in the frequency band from 0.045 to 2.5 GHz is attained without significant degradation of gain and noise performance. The post simulation result has indicated a conversion gain of 5.8~8.6dB, a low noise figure of 7.4~9.1dB. The preliminary measured result shows good IF matching (S parameter at the output buffer) of -25.6~-9.1dB. The whole mixer has a compact die area of 0.093 mm2 and a current consumption of 9.1mA under 1.8-V supply voltage.