G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo
{"title":"Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution","authors":"G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo","doi":"10.1109/IIRW.2015.7437086","DOIUrl":null,"url":null,"abstract":"A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.","PeriodicalId":120239,"journal":{"name":"2015 IEEE International Integrated Reliability Workshop (IIRW)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2015.7437086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.
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