Paramagnetic defects in SIMOX with supplemental implantation of oxygen

Abstract

We analyzed the impact of supplemental oxygen implantation and subsequent annealing at 1100/spl deg/C on standard separation-by-implantation-of-oxygen (SIMOX) material, by looking at inherent defects in SIMOX, using low temperature K-band electron spin resonance (ESR). These defects include E/sub /spl gamma//', E/sub /spl delta//', both oxygen-deficiency centers in the buried oxide (BOX). Also, hydrogen-induced positive charge centers in the BOX, and an oxygen-related shallow donor in the Si, both close to the two BOX/Si interfaces, were studied. Our main conclusion is that the supplemental oxygen implant significantly reduces the E' generation sensitivity of the BOX. The oxygen related shallow donor density on the other hand, was found to increase by up to a factor of 6.