Effect of confinement in III-V nanowire field effect transistors

Abstract

Using quantum transport simulations the effect of confinement in GaAs and InGaAs gate-all-around (GAA) nanowire field effect transistors (NWFETs) of different dimensions has been investigated. NWFETs of two cross-sections: 2.2x2.2 nm2 and 4.2x4.2 nm2 and three channel lengths: 6 nm, 10 nm and 20 nm have been simulated. The Non-Equilibrium Green's Function (NEGF) formalism in the effective mass approximation (EMA) has been used, and both ballistic and dissipative transport have been considered. Scattering mechanisms for acoustic, optical and polar optical phonons have been included. The effective masses have been extracted from tight-binding (TB) simulations.