M. Nagata, N. Miura, S. Muroga, Satoshi Tanaka, M. Yamaguchi
{"title":"On-chip and on-board RF noise coupling and impacts on LTE wireless communication performance (Invited)","authors":"M. Nagata, N. Miura, S. Muroga, Satoshi Tanaka, M. Yamaguchi","doi":"10.1109/RFIT.2015.7377869","DOIUrl":null,"url":null,"abstract":"In-band interferers due to noise coupling from baseband digital circuits significantly impact on the wireless communication performance, in the case of single-chip system-level integration. The on-chip and off-chip (on-board) noise coupling are measured for visualizing the noise couplings. In addition, the hardware-in-the-loop simulation (HILS) estimates their impacts on the performance metrics like throughputs, under the interactions of interferers with the operation of LTE-compliant RF receiver circuits in a 65 nm CMOS technology.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377869","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In-band interferers due to noise coupling from baseband digital circuits significantly impact on the wireless communication performance, in the case of single-chip system-level integration. The on-chip and off-chip (on-board) noise coupling are measured for visualizing the noise couplings. In addition, the hardware-in-the-loop simulation (HILS) estimates their impacts on the performance metrics like throughputs, under the interactions of interferers with the operation of LTE-compliant RF receiver circuits in a 65 nm CMOS technology.