Monolithically Integrated Optoelectronic Transmitter based on Segmented Mach-Zehnder Modulator in EPIC 250 nm BiCMOS Technology

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2023-01-22 DOI:10.1109/SiRF56960.2023.10046278

Festim Iseini, M. Inac, A. Malignaggi, A. Peczek, G. Kahmen

{"title":"Monolithically Integrated Optoelectronic Transmitter based on Segmented Mach-Zehnder Modulator in EPIC 250 nm BiCMOS Technology","authors":"Festim Iseini, M. Inac, A. Malignaggi, A. Peczek, G. Kahmen","doi":"10.1109/SiRF56960.2023.10046278","DOIUrl":null,"url":null,"abstract":"This paper presents a monolithically integrated optoelectronic transmitter based on a segmented Mach-Zehnder modulator. The chip is fabricated in the 250nmSiGe BiCMOS SG25H5 EPIC technology developed at IHP, a silicon-photonic technology combining 0.25 $\\mu$m CMOS, high-performance npn HBTs (featuring $\\mathrm{f}_{\\mathrm{t}}$/fmax of 210/290 GHz), and a full photonic device set for C/O-band. The chip includes a linear electrical driver, a 5 segments Mach-Zehnder modulator, for a total phase shifter length of 2 mm. Electro-optical time-domain measurements demonstrate open eye diagrams up to 44 Gb/s NRZ. The electro-optical bandwidth is 35 GHz, while the power consumption is 500mW, resulting in a power efficiency of 11.3 pJ/bit at 44 Gb/s. The reported transmitter results in a compact and power efficient solution compared to others in a silicon monolithic approach and comparable to hybrid solutions, within the higher 3 dB electro-optical bandwidth that can be found in the literature.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

This paper presents a monolithically integrated optoelectronic transmitter based on a segmented Mach-Zehnder modulator. The chip is fabricated in the 250nmSiGe BiCMOS SG25H5 EPIC technology developed at IHP, a silicon-photonic technology combining 0.25 $\mu$m CMOS, high-performance npn HBTs (featuring $\mathrm{f}_{\mathrm{t}}$/fmax of 210/290 GHz), and a full photonic device set for C/O-band. The chip includes a linear electrical driver, a 5 segments Mach-Zehnder modulator, for a total phase shifter length of 2 mm. Electro-optical time-domain measurements demonstrate open eye diagrams up to 44 Gb/s NRZ. The electro-optical bandwidth is 35 GHz, while the power consumption is 500mW, resulting in a power efficiency of 11.3 pJ/bit at 44 Gb/s. The reported transmitter results in a compact and power efficient solution compared to others in a silicon monolithic approach and comparable to hybrid solutions, within the higher 3 dB electro-optical bandwidth that can be found in the literature.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

基于分段Mach-Zehnder调制器的EPIC 250nm BiCMOS单片集成光电发射机

提出了一种基于分段马赫-曾德尔调制器的单片集成光电发射机。该芯片采用IHP开发的250nmSiGe BiCMOS SG25H5 EPIC技术制造，该技术是一种硅光子技术，结合了0.25 $\mu$m CMOS，高性能npn hts(具有$\ mathm {f}_{\ mathm {t}}$/fmax为210/290 GHz)和C/ o波段的全光子器件集。该芯片包括一个线性电驱动器，一个5段Mach-Zehnder调制器，总移相器长度为2mm。光电时域测量显示睁眼图高达44 Gb/s NRZ。电光带宽为35ghz，功耗为500mW，在44gb /s速率下的功率效率为11.3 pJ/bit。与硅单片方法中的其他方法相比，所报告的发射机具有紧凑且节能的解决方案，可与混合解决方案相媲美，并且可以在文献中找到更高的3db电光带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

自引率

0.00%

发文量