Enhanced Package Fault Isolation Method Using Time Domain Reflectometry (TDR) Incorporation with Mathematics

Lan Yin Lee, Kok Keng Chua
{"title":"Enhanced Package Fault Isolation Method Using Time Domain Reflectometry (TDR) Incorporation with Mathematics","authors":"Lan Yin Lee, Kok Keng Chua","doi":"10.1109/IPFA47161.2019.8984800","DOIUrl":null,"url":null,"abstract":"Time domain reflectometry (TDR) has gained attention in electrical verification for electronic components over the years. TDR works by sending a series of short pulses through a transmission line under investigation, and measures the reflections that result from a signal travelling through a transmission environment. [1], [2] It is often being used for short or open failures defect localization, to isolate whether the short/ open failure is in the die region or package region. With the enhancement of process technology and increase of layers in the package/ silicon die, and due to limitation of reference medium, the results produced by using TDR can only be used as a rough guide, i.e. based on the TDR results, we can only narrow the open/ short failure to be in the die or package, we could not tell which layer of package the short/open is. This paper demonstrates some successful cases with the incorporation of mathematics together with the use of TDR machine. Open failure can be accurately localized down to specific substrate layer via mathematics calculation. Physical failure analysis further confirmed the accuracy of this method by showing the defect at that specific layer in those cases.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Time domain reflectometry (TDR) has gained attention in electrical verification for electronic components over the years. TDR works by sending a series of short pulses through a transmission line under investigation, and measures the reflections that result from a signal travelling through a transmission environment. [1], [2] It is often being used for short or open failures defect localization, to isolate whether the short/ open failure is in the die region or package region. With the enhancement of process technology and increase of layers in the package/ silicon die, and due to limitation of reference medium, the results produced by using TDR can only be used as a rough guide, i.e. based on the TDR results, we can only narrow the open/ short failure to be in the die or package, we could not tell which layer of package the short/open is. This paper demonstrates some successful cases with the incorporation of mathematics together with the use of TDR machine. Open failure can be accurately localized down to specific substrate layer via mathematics calculation. Physical failure analysis further confirmed the accuracy of this method by showing the defect at that specific layer in those cases.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
时域反射与数学相结合的改进包故障隔离方法
时域反射法(TDR)近年来在电子元件的电气验证中得到了广泛的关注。TDR的工作原理是通过被调查的传输线发送一系列短脉冲,并测量信号在传输环境中传播所产生的反射。[1],[2]常用于短失效或开故障缺陷定位,以隔离短失效/开故障是在模具区还是在封装区。随着工艺技术的提高和封装/硅模层数的增加,由于参考介质的限制,使用TDR产生的结果只能作为一个粗略的指导,即根据TDR结果,我们只能缩小在芯片或封装中的开/短故障,我们无法判断出短/开在封装的哪一层。本文结合数学和TDR机的应用,给出了一些成功的实例。通过数学计算,可以精确地定位到特定的衬底层。物理失效分析通过在这些情况下显示特定层的缺陷进一步证实了该方法的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
How To Determine Fluorine Contamination Level On A Normal Al Bondpad? Increased Fault Isolation Efficiency by Using Scan Cell Visualizer for Scan Chain Failures The Solutions of Bit Line Failure Analysis: Low kV E-Beam, EBAC and LVI Correlation Analysis and Characterization of Micromorphology and Optoelectronic Properties of SiO2/SiC in Pressure Sensor A Robust Dual Directional SCR without Current Saturation Effect for ESD Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1