{"title":"A body-contact SOI MOSFET model for circuit simulation","authors":"P. Su, S. Fung, F. Assaderaghi, C. Hu","doi":"10.1109/SOI.1999.819853","DOIUrl":null,"url":null,"abstract":"Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.
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