Jin-Hee Lee, H. Yoon, Chul-Soon Park, Hyung‐Moo Park
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引用次数: 3
Abstract
The parasitic gate resistance is one of the most important factors in determining the noise performance of HEMTs. In order to reduce the gate resistance, T-shaped gates with large cross-sectional area are required. In this study, we report a AlGaAs/InGaAs pseudomorphic HEMT with a newly developed wide head T-gate fabricated by using dose split electron beam lithography and selective gate recess etching.
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