Circuit simulator and compact model requisites for accurate simulation of AC floating body behaviour in PD SOI

Abstract

Investigations of floating body behaviour of partially depleted (PD) SOI MOSFETs have established the presence of frequency-dependent drain conductance behaviour below the onset of the kink effect (Howes and Redman-White, 1992). This is due to capacitive coupling, and is not related to self-heating (Caviglia and Iliadis, 1992; Redman-White et al. 1992). As the conductances associated with the body node are extremely low in this region, we found that there are unexpected constraints on both the formulation of PD SOI compact models and their implementation in circuit simulation packages.