Reactive chip level bonding based on CuO/Al reactive multilayer systems

Abstract

Reactive bonding is a new innovative technology for room temperature bonding of wafers chips and components within seconds. The CuO/Al reactive multilayer system shows great potential as internal heat source for wafer and chip level packaging of optical microsystems. The transfer of the material from wafer to chip level enables a fast integration without additional heating and cooling steps. The ignition of the reaction can be achieved by direct spark or laser ignition as well as indirect potential based ignition. The demand for particle free bonding in optical systems also favors the indirect ignition. Furthermore, the shear strength of the chip bonded Si-glass samples strongly depends on a successful wedge compensation, enabling an increase of the average shear strength by 37 %.