G. Reichert, T. Ouisse, J. Pelloie, S. Cristoloveanu
{"title":"Surface mobility of SOI MOSFET's in the high temperature range: modelling and experiment","authors":"G. Reichert, T. Ouisse, J. Pelloie, S. Cristoloveanu","doi":"10.1109/SOI.1995.526451","DOIUrl":null,"url":null,"abstract":"The temperature range of silicon components may be substantially extended by using SOI devices. In this paper, we propose a new physical definition of the usual parameters appearing in the empirical models used for expressing the surface mobility. We also present a thorough experimental study of the mobility in thin film SOI MOSFET's, in the temperature range 298-623K. All data agree with the theoretical model, which may thus be used for a physical interpretation of the results from room to high temperature.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The temperature range of silicon components may be substantially extended by using SOI devices. In this paper, we propose a new physical definition of the usual parameters appearing in the empirical models used for expressing the surface mobility. We also present a thorough experimental study of the mobility in thin film SOI MOSFET's, in the temperature range 298-623K. All data agree with the theoretical model, which may thus be used for a physical interpretation of the results from room to high temperature.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
