{"title":"Novel inverted sample thinning method by ex-situ lift-out","authors":"L. Nan","doi":"10.1109/IPFA.2014.6898129","DOIUrl":null,"url":null,"abstract":"Curtaining effect and sample thickness constraints are always the key factors of limiting the use of ex-situ lift-out technique in advanced semiconductor device analysis. Over the years, in-situ lift-out technique has gradually replaced ex-situ lift-out because it offers greater advantages that can overcome the mentioned problems. A novel technique has been developed to prepare ultra-thin TEM specimens by inverted FIB thinning without the need of installing FIB chamber-mounted probe.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"25 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Curtaining effect and sample thickness constraints are always the key factors of limiting the use of ex-situ lift-out technique in advanced semiconductor device analysis. Over the years, in-situ lift-out technique has gradually replaced ex-situ lift-out because it offers greater advantages that can overcome the mentioned problems. A novel technique has been developed to prepare ultra-thin TEM specimens by inverted FIB thinning without the need of installing FIB chamber-mounted probe.
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