Circuit-level Prediction of Charge Sharing Transients and Upsets for Various Well Contacts

Abstract

Bipolar amplification effects and feedback of well potential modulation on the primary charge collection were modeled and integrated into bias-dependent SEE model with layout information considered. Through monitoring the well potential evolution with time, establishing the relationship between bipolar amplification current and well potential other than using the parameter current gain, and establishing the relationship between collection current and well potential, phenomena including the pulse quenching in inverter chain, the pulse width increase with reduced well contact area, the upset vulnerability evolution with various well contact areas, etc, can be simulated and evaluated.