{"title":"A flip-chip implementation of the Data Encryption Standard (DES)","authors":"T. Schaffer, A. Glaser, S. Rao, P. Franzon","doi":"10.1109/MCMC.1997.569339","DOIUrl":null,"url":null,"abstract":"We describe a flip-chip MCM-D implementation of a Data Encryption Standard (DES) engine. Novel features include the following: use of dense area-array I/O to achieve high bandwidth, fully-pipelined architecture which supports multiple encryptions (e.g., triple DES) with no loss of throughput; ability to multiplex datastreams, each under the control of a potentially unique key, and use of the MCM-D substrate to distribute power, ground and clock signals. The chip is being fabricated in a 0.6 /spl mu/m CMOS process, while the MCM is being built in a 4-layer polyimide MCM-D process. Circuit simulations indicate the device will operate with a throughput of 9.6 Gb/s.","PeriodicalId":412444,"journal":{"name":"Proceedings 1997 IEEE Multi-Chip Module Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1997 IEEE Multi-Chip Module Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1997.569339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
We describe a flip-chip MCM-D implementation of a Data Encryption Standard (DES) engine. Novel features include the following: use of dense area-array I/O to achieve high bandwidth, fully-pipelined architecture which supports multiple encryptions (e.g., triple DES) with no loss of throughput; ability to multiplex datastreams, each under the control of a potentially unique key, and use of the MCM-D substrate to distribute power, ground and clock signals. The chip is being fabricated in a 0.6 /spl mu/m CMOS process, while the MCM is being built in a 4-layer polyimide MCM-D process. Circuit simulations indicate the device will operate with a throughput of 9.6 Gb/s.