Photoluminescence Studies of overgrown GaAs/AlGaAs MOCVD and MBE Quantum Dots..

H. Arnot, C. Sotomayor-Torres, R. Cuscó, M. Watt, R. Glew, S. Beaumont
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Abstract

A comparison of the photoluminescence emission from MOCVD overgrown quantum dots (QDs) patterned in MOCVD and MBE grown starting material has been made. Before overgrowth luminescence was obtained from the QDs down to 750Å in diameter fabricated in MBE material whereas after overgrowth only the larger 3000Å QDs luminesce. However when MOCVD material is used the largest dots (3500Å) only luminesce after regrowth. With both types of material the QW emission shifts to higher energies after regrowth.
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过度生长的GaAs/AlGaAs MOCVD和MBE量子点的光致发光研究
比较了MOCVD过度生长量子点和MBE生长起始材料的光致发光特性。在过度生长之前,在MBE材料中制备的量子点直径为750Å,而过度生长之后,只有较大的3000Å量子点发光。然而,当使用MOCVD材料时,最大的点(3500Å)仅在再生后发光。在这两种材料中,量子阱在再生后会向更高的能量转移。
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