Root Cause Analysis on Analog Circuit Using TR-LADA

Lua Winson, P. Angeline, G. Ranganathan, A. Girish, Ravikumar Venkat Krishnan
{"title":"Root Cause Analysis on Analog Circuit Using TR-LADA","authors":"Lua Winson, P. Angeline, G. Ranganathan, A. Girish, Ravikumar Venkat Krishnan","doi":"10.1109/IPFA47161.2019.8984900","DOIUrl":null,"url":null,"abstract":"Analog circuits are traditionally harder to debug using light assisted device alteration (LADA) also known as dynamic laser stimulation (DLS), as the circuitry are too sensitive to carrier generations. This paper showcases a successful post-silicon debug on analog circuitries (start-up circuit) using nanosecond pulse-on-demand laser to perform DLS leading into root cause identification on a marginality issue in a sub-20nm FinFET technology device.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Analog circuits are traditionally harder to debug using light assisted device alteration (LADA) also known as dynamic laser stimulation (DLS), as the circuitry are too sensitive to carrier generations. This paper showcases a successful post-silicon debug on analog circuitries (start-up circuit) using nanosecond pulse-on-demand laser to perform DLS leading into root cause identification on a marginality issue in a sub-20nm FinFET technology device.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于TR-LADA的模拟电路根本原因分析
传统上,使用光辅助设备改变(LADA)(也称为动态激光刺激(DLS))来调试模拟电路比较困难,因为电路对载波世代太敏感。本文展示了在模拟电路(启动电路)上成功的后硅调试,使用纳秒脉冲按需激光对低于20nm FinFET技术器件的边缘问题执行DLS,从而找到根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
How To Determine Fluorine Contamination Level On A Normal Al Bondpad? Increased Fault Isolation Efficiency by Using Scan Cell Visualizer for Scan Chain Failures The Solutions of Bit Line Failure Analysis: Low kV E-Beam, EBAC and LVI Correlation Analysis and Characterization of Micromorphology and Optoelectronic Properties of SiO2/SiC in Pressure Sensor A Robust Dual Directional SCR without Current Saturation Effect for ESD Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1