M. Burnus, H. Taddiken, H.-D. Hartmann, T. Hillmann-Ruge
{"title":"Laser personalization of interconnection arrays for hybrid ASICs","authors":"M. Burnus, H. Taddiken, H.-D. Hartmann, T. Hillmann-Ruge","doi":"10.1109/ICWSI.1993.255245","DOIUrl":null,"url":null,"abstract":"Configurable interconnection arrays for wafer scale integration (WSI) constitute an application for thin-film multichip modules (MCMs) based on silicon. Laser-formed vertical links allow short cycle times and introduce redundancy into the MCSi (multichip on silicon) technique. As personalization is performed after complete wafer processing, large-volume manufacturing without individual process steps is possible. Laser process parameters developed for a standard CMOS double-level metallization are adapted to a double-level sandwich metallization. Burn-in measurements are carried out with currents up to 150 mA. Laser contacts are found to be suitable for different standard double-level metallizations and for configuration of interconnection arrays.<<ETX>>","PeriodicalId":377227,"journal":{"name":"1993 Proceedings Fifth Annual IEEE International Conference on Wafer Scale Integration","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 Proceedings Fifth Annual IEEE International Conference on Wafer Scale Integration","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICWSI.1993.255245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Configurable interconnection arrays for wafer scale integration (WSI) constitute an application for thin-film multichip modules (MCMs) based on silicon. Laser-formed vertical links allow short cycle times and introduce redundancy into the MCSi (multichip on silicon) technique. As personalization is performed after complete wafer processing, large-volume manufacturing without individual process steps is possible. Laser process parameters developed for a standard CMOS double-level metallization are adapted to a double-level sandwich metallization. Burn-in measurements are carried out with currents up to 150 mA. Laser contacts are found to be suitable for different standard double-level metallizations and for configuration of interconnection arrays.<>
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