T. Uemura, Byungjin Chung, J. Jo, Hai Jiang, Yongsung Ji, T. Jeong, R. Ranjan, Youngin Park, K. Hong, Seungbae Lee, H. Rhee, S. Pae, Euncheol Lee, Jaehee Choi, Shotaro Ohnishi, Ken Machida
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引用次数: 7
Abstract
This paper investigates soft error in memories and logic circuits in 28 nm planar-FDSOI technology by neutron, alpha, proton, and gamma-ray irradiation tests, and compares with SER in bulk-FinFET. The comparison elucidates the different SER trends between planar-FDSOI and bulk-FinFET.
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